Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode
نویسندگان
چکیده
منابع مشابه
I D C O P I N I O N
The relevance of security as one of the major contributors to an effective operational infrastructure has been growing in importance over the past 3-5 years, and today it resides as one of the two top investment priorities for senior management (the other one being critical server virtualization). Effective management by organizations when dealing with targeted and multiple parallel attacks com...
متن کاملCharacterization of an Mg-implanted GaN p-i-n Diode
A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.
متن کاملPoint defect engineered Si sub-bandgap light-emitting diode.
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line ...
متن کاملWaste P I I N I M I Z a T I O N in Historical Perspective
Advocates of waste minimization seek to encourage this form of industrial waste management through economic incentives. A review of waste reduction activities between the midnineteenth century and 1970 demonstrates that the influences of pollution control legislation, technological innovation, and cost savings produced only limited achievements when enforced or promoted separately. when governm...
متن کاملCarrier Transport and Screening in n ± i ± p ± i Crystals
The variation of the energy spectrum of n±i±p±i crystals under excitation was examined and the influence of the reduction of the screening length on the ratio between the coefficient of diffusion and the mobility of the current carriers was established. It is shown that the filling of subband states by carriers results in an anomalous behaviour of the diffusivity±mobility ratio. The effect occu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2018
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2018.2846360